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Title: Generation of localized strain in a thin film piezoelectric to control individual magnetoelectric heterostructures

Experimental results demonstrate the ability of a surface electrode pattern to produce sufficient in-plane strain in a PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} (PZT) thin film clamped by a Si substrate to control magnetism in a 1000 nm diameter Ni ring. The electrode pattern and the Ni ring/PZT thin film heterostructure were designed using a finite element based micromagnetics code. The magnetoelectric heterostructures were fabricated on the PZT film using e-beam lithography and characterized using magnetic force microscopy. Application of voltage to the electrodes moved one of the “onion” state domain walls. This method enables the development of complex architectures incorporating strain-mediated multiferroic devices.
Authors:
; ; ; ;  [1] ; ;  [2]
  1. Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, California 90095 (United States)
  2. Electronic, Optical, and Nano Materials Department, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Publication Date:
OSTI Identifier:
22489206
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATOMIC FORCE MICROSCOPY; ELECTRICAL PROPERTIES; ELECTRON BEAMS; FINITE ELEMENT METHOD; MAGNETIC PROPERTIES; MAGNETISM; PIEZOELECTRICITY; PZT; STRAINS; SUBSTRATES; SURFACES; THIN FILMS