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Title: Damage free integration of ultralow-k dielectrics by template replacement approach

Cu/low-k integration by conventional damascene approach is becoming increasingly difficult as critical dimensions scale down. An alternative integration scheme is studied based on the replacement of a sacrificial template by ultralow-k dielectric. A metal structure is first formed by patterning a template material. After template removal, a k = 2.31 spin-on type of porous low-k dielectric is deposited onto the patterned metal lines. The chemical and electrical properties of spin-on dielectrics are studied on blanket wafers, indicating that during hard bake, most porogen is removed within few minutes, but 120 min are required to achieve the lowest k-value. The effective dielectric constant of the gap-fill low-k is investigated on a 45 nm ½ pitch Meander-Fork structure, leading to k{sub eff} below 2.4. The proposed approach solves the two major challenges in conventional Cu/low-k damascene integration approach: low-k plasma damage and metal penetration during barrier deposition on porous materials.
Authors:
;  [1] ;  [2] ; ; ; ; ; ;  [1]
  1. IMEC, Kapeldreef 75, 3001 Heverlee (Belgium)
  2. (Belgium)
Publication Date:
OSTI Identifier:
22489204
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DAMAGE; DEPOSITION; DEPOSITS; DIELECTRIC MATERIALS; METALS; PERMITTIVITY; POROUS MATERIALS; SPIN