Damage free integration of ultralow-k dielectrics by template replacement approach
- IMEC, Kapeldreef 75, 3001 Heverlee (Belgium)
Cu/low-k integration by conventional damascene approach is becoming increasingly difficult as critical dimensions scale down. An alternative integration scheme is studied based on the replacement of a sacrificial template by ultralow-k dielectric. A metal structure is first formed by patterning a template material. After template removal, a k = 2.31 spin-on type of porous low-k dielectric is deposited onto the patterned metal lines. The chemical and electrical properties of spin-on dielectrics are studied on blanket wafers, indicating that during hard bake, most porogen is removed within few minutes, but 120 min are required to achieve the lowest k-value. The effective dielectric constant of the gap-fill low-k is investigated on a 45 nm ½ pitch Meander-Fork structure, leading to k{sub eff} below 2.4. The proposed approach solves the two major challenges in conventional Cu/low-k damascene integration approach: low-k plasma damage and metal penetration during barrier deposition on porous materials.
- OSTI ID:
- 22489204
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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