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Title: Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF{sub 2} crystalline substrates, respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk. With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.
Authors:
; ; ; ; ;  [1]
  1. Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973 (United States)
Publication Date:
OSTI Identifier:
22489203
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CRITICAL FIELD; DOPED MATERIALS; ENERGY BEAM DEPOSITION; EPITAXY; INDIUM; LASER RADIATION; MAGNETORESISTANCE; PULSED IRRADIATION; QUANTUM COMPUTERS; SUPERCONDUCTIVITY; SUPERCONDUCTORS; THIN FILMS; TIN TELLURIDES; TOPOLOGY; TRANSITION TEMPERATURE