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Title: Fracture dynamics in implanted silicon

Crack propagation in implanted silicon for thin layer transfer is experimentally studied. The crack propagation velocity as a function of split temperature is measured using a designed optical setup. Interferometric measurement of the gap opening is performed dynamically and shows an oscillatory crack “wake” with a typical wavelength in the centimetre range. The dynamics of this motion is modelled using beam elasticity and thermodynamics. The modelling demonstrates the key role of external atmospheric pressure during crack propagation. A quantification of the amount of gas trapped inside pre-existing microcracks and released during the fracture is made possible, with results consistent with previous studies.
Authors:
; ; ; ;  [1] ;  [2] ; ;  [1] ;  [2] ; ;  [3]
  1. Univ. Grenoble Alpes, F-38000 Grenoble (France)
  2. (France)
  3. SOITEC, Parc Technologique des Fontaines, 38190 Bernin (France)
Publication Date:
OSTI Identifier:
22489200
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATMOSPHERIC PRESSURE; BEAMS; CRACK PROPAGATION; CRACKS; DESIGN; ELASTICITY; FRACTURES; SILICON; SIMULATION; THERMODYNAMICS; THIN FILMS; TRAPPING; VELOCITY