Fracture dynamics in implanted silicon

Journal Article · Mon Aug 31 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4930016· OSTI ID:22489200

Massy, D.; Tardif, S.; Penot, J. D.; Ragani, J.; Rieutord, F. ^[1]; Mazen, F.; Madeira, F. ^[1]; Landru, D.; Kononchuk, O. ^[2]

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1. Univ. Grenoble Alpes, F-38000 Grenoble (France)
2. SOITEC, Parc Technologique des Fontaines, 38190 Bernin (France)

Crack propagation in implanted silicon for thin layer transfer is experimentally studied. The crack propagation velocity as a function of split temperature is measured using a designed optical setup. Interferometric measurement of the gap opening is performed dynamically and shows an oscillatory crack “wake” with a typical wavelength in the centimetre range. The dynamics of this motion is modelled using beam elasticity and thermodynamics. The modelling demonstrates the key role of external atmospheric pressure during crack propagation. A quantification of the amount of gas trapped inside pre-existing microcracks and released during the fracture is made possible, with results consistent with previous studies.

• OSTI ID: 22489200
• Journal Information: Applied Physics Letters, Vol. 107, Issue 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ATMOSPHERIC PRESSURE
BEAMS
CRACK PROPAGATION
CRACKS
DESIGN
ELASTICITY
FRACTURES
SILICON
SIMULATION
THERMODYNAMICS
THIN FILMS
TRAPPING
VELOCITY