skip to main content

Title: Temperature-dependent dielectric functions in atomically thin graphene, silicene, and arsenene

The dielectric functions of atomically thin graphene, silicene, and arsenene have been investigated as a function of temperature. With zero energy gap, more carriers in graphene and silicene are thermally excited as temperature increases and intraband transition strengthens, resulting in the strengthened absorption peak. Yet with large energy gap, interband transition dominates optical absorption of arsenene but it reduces as lattice vibration enhances, inducing the redshift and decreased absorption peak. To validate the theoretical method, the calculated optical constants of isolated graphene are compared with ellipsometry results and demonstrate good agreement.
Authors:
 [1] ;  [1] ;  [2]
  1. School of Energy Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22489195
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; CARRIERS; DIELECTRIC MATERIALS; ELLIPSOMETRY; ENERGY GAP; ENERGY-LEVEL TRANSITIONS; GRAPHENE; PEAKS; RED SHIFT; SILICENE; TEMPERATURE DEPENDENCE