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Title: Direct observation of a gap opening in topological interface states of MnSe/Bi{sub 2}Se{sub 3} heterostructure

High-quality MnSe(111) film was bilayer-by-bilayer grown epitaxially onto the Bi{sub 2}Se{sub 3}(111) surface using molecular beam epitaxy. Reversal scenario with quintuple layer-by-layer growth of Bi{sub 2}Se{sub 3} onto the MnSe film was also realized. Angle-resolved photoemission spectroscopy measurements of Bi{sub 2}Se{sub 3} capped with two bi-layers of MnSe revealed that an energy gap of about 90 meV appears at the Dirac point of the original Bi{sub 2}Se{sub 3} surface, possibly due to breaking the time-reversal symmetry on the Bi{sub 2}Se{sub 3} surface by magnetic proximity effect from MnSe.
Authors:
; ;  [1] ;  [2] ;  [3] ;  [4] ;  [1] ;  [2] ;  [2]
  1. Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladivostok 690041 (Russian Federation)
  2. (Russian Federation)
  3. Department of Physics, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo 152-8551 (Japan)
  4. Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan)
Publication Date:
OSTI Identifier:
22489194
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BISMUTH SELENIDES; ENERGY GAP; FILMS; INTERFACES; LAYERS; MANGANESE SELENIDES; MILLI EV RANGE; MOLECULAR BEAM EPITAXY; PHOTOELECTRON SPECTROSCOPY; PROXIMITY EFFECT; SURFACES; SYMMETRY; TOPOLOGY