Direct observation of a gap opening in topological interface states of MnSe/Bi{sub 2}Se{sub 3} heterostructure

Journal Article · Mon Aug 31 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4930151· OSTI ID:22489194

Kibirev, I. A.; Saranin, A. A. ^[1]; Hirahara, T. ^[2]; Hasegawa, S. ^[3]; Zotov, A. V. ^[1]

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1. Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladivostok 690041 (Russian Federation)
2. Department of Physics, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo 152-8551 (Japan)
3. Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan)

High-quality MnSe(111) film was bilayer-by-bilayer grown epitaxially onto the Bi{sub 2}Se{sub 3}(111) surface using molecular beam epitaxy. Reversal scenario with quintuple layer-by-layer growth of Bi{sub 2}Se{sub 3} onto the MnSe film was also realized. Angle-resolved photoemission spectroscopy measurements of Bi{sub 2}Se{sub 3} capped with two bi-layers of MnSe revealed that an energy gap of about 90 meV appears at the Dirac point of the original Bi{sub 2}Se{sub 3} surface, possibly due to breaking the time-reversal symmetry on the Bi{sub 2}Se{sub 3} surface by magnetic proximity effect from MnSe.

• OSTI ID: 22489194
• Journal Information: Applied Physics Letters, Vol. 107, Issue 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BISMUTH SELENIDES
ENERGY GAP
FILMS
INTERFACES
LAYERS
MANGANESE SELENIDES
MILLI EV RANGE
MOLECULAR BEAM EPITAXY
PHOTOELECTRON SPECTROSCOPY
PROXIMITY EFFECT
SURFACES
SYMMETRY
TOPOLOGY