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Title: Lasing action and extraordinary reduction in long radiative lifetime of type-II GaSb/GaAs quantum dots using circular photonic crystal nanocavity

Abstract

We demonstrated the lasing action and remarkable reduction in long radiative lifetimes of type-II GaSb/GaAs quantum dots using a circular photonic-crystal nano-cavity with high Purcell factors. The associated enhancement in carrier recombination was surprisingly high and could even surpass type-I counterparts in similar conditions. These phenomena reveal that the type-II sample exhibited extremely low nonradiative recombination so that weak radiative transitions were more dominant than expected. The results indicate that type-II nanostructures may be advantageous for applications which require controllable radiative transitions but low nonradiative depletions.

Authors:
;  [1]; ; ; ;  [1];  [1];  [2];  [1]
  1. Research Center for Applied Sciences (RCAS), Academia Sinica, 128 Academia Rd., Sec. 2 Nankang, Taipei 11529, Taiwan (China)
  2. Department of Photonics, National Chiao Tung University (NCTU), 1001 University Road, Hsinchu 300, Taiwan (China)
Publication Date:
OSTI Identifier:
22489189
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIERS; CRYSTALS; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; LANTHANUM SELENIDES; LIFETIME; QUANTUM DOTS; RECOMBINATION

Citation Formats

Hsu, Kung-Shu, Chang, Shu-Wei, Department of Photonics, National Chiao Tung University, Hung, Wei-Chun, Chang, Chih-Chi, Lin, Wei-Hsun, Lin, Shih-Yen, Shih, Min-Hsiung, Department of Photonics, National Chiao Tung University, Department of Photonics, National Sun Yat-sen University, Lee, Po-Tsung, Chang, Yia-Chung, Department of Photonics, National Chiao Tung University, and Department of Physics, National Cheng Kung University. Lasing action and extraordinary reduction in long radiative lifetime of type-II GaSb/GaAs quantum dots using circular photonic crystal nanocavity. United States: N. p., 2015. Web. doi:10.1063/1.4929948.
Hsu, Kung-Shu, Chang, Shu-Wei, Department of Photonics, National Chiao Tung University, Hung, Wei-Chun, Chang, Chih-Chi, Lin, Wei-Hsun, Lin, Shih-Yen, Shih, Min-Hsiung, Department of Photonics, National Chiao Tung University, Department of Photonics, National Sun Yat-sen University, Lee, Po-Tsung, Chang, Yia-Chung, Department of Photonics, National Chiao Tung University, & Department of Physics, National Cheng Kung University. Lasing action and extraordinary reduction in long radiative lifetime of type-II GaSb/GaAs quantum dots using circular photonic crystal nanocavity. United States. https://doi.org/10.1063/1.4929948
Hsu, Kung-Shu, Chang, Shu-Wei, Department of Photonics, National Chiao Tung University, Hung, Wei-Chun, Chang, Chih-Chi, Lin, Wei-Hsun, Lin, Shih-Yen, Shih, Min-Hsiung, Department of Photonics, National Chiao Tung University, Department of Photonics, National Sun Yat-sen University, Lee, Po-Tsung, Chang, Yia-Chung, Department of Photonics, National Chiao Tung University, and Department of Physics, National Cheng Kung University. 2015. "Lasing action and extraordinary reduction in long radiative lifetime of type-II GaSb/GaAs quantum dots using circular photonic crystal nanocavity". United States. https://doi.org/10.1063/1.4929948.
@article{osti_22489189,
title = {Lasing action and extraordinary reduction in long radiative lifetime of type-II GaSb/GaAs quantum dots using circular photonic crystal nanocavity},
author = {Hsu, Kung-Shu and Chang, Shu-Wei and Department of Photonics, National Chiao Tung University and Hung, Wei-Chun and Chang, Chih-Chi and Lin, Wei-Hsun and Lin, Shih-Yen and Shih, Min-Hsiung and Department of Photonics, National Chiao Tung University and Department of Photonics, National Sun Yat-sen University and Lee, Po-Tsung and Chang, Yia-Chung and Department of Photonics, National Chiao Tung University and Department of Physics, National Cheng Kung University},
abstractNote = {We demonstrated the lasing action and remarkable reduction in long radiative lifetimes of type-II GaSb/GaAs quantum dots using a circular photonic-crystal nano-cavity with high Purcell factors. The associated enhancement in carrier recombination was surprisingly high and could even surpass type-I counterparts in similar conditions. These phenomena reveal that the type-II sample exhibited extremely low nonradiative recombination so that weak radiative transitions were more dominant than expected. The results indicate that type-II nanostructures may be advantageous for applications which require controllable radiative transitions but low nonradiative depletions.},
doi = {10.1063/1.4929948},
url = {https://www.osti.gov/biblio/22489189}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 9,
volume = 107,
place = {United States},
year = {Mon Aug 31 00:00:00 EDT 2015},
month = {Mon Aug 31 00:00:00 EDT 2015}
}