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Title: Silicon-nitride photonic circuits interfaced with monolayer MoS{sub 2}

We report on the integration of monolayer molybdenum disulphide with silicon nitride microresonators assembled by visco-elastic layer transfer techniques. Evanescent coupling from the resonator mode to the monolayer is confirmed through measurements of cavity transmission. The absorption of the monolayer semiconductor flakes in this geometry is determined to be 850 dB/cm, which is larger than that of graphene and black phosphorus with the same thickness. This technique can be applied to diverse monolayer semiconductors for assembling hybrid optoelectronic devices such as photodetectors and modulators operating over a wide spectral range.
Authors:
 [1] ;  [2] ; ;  [3] ;  [1] ;  [4]
  1. Applied Physics Program, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208 (United States)
  2. Department of Physics and Astronomy, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208 (United States)
  3. Center for Nanoscale Materials, Argonne National Laboratory, 9700 S Cass Avenue, Argonne, Illinois 60439 (United States)
  4. (United States)
Publication Date:
OSTI Identifier:
22489188
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; GRAPHENE; INTERFACES; MOLYBDENUM; MOLYBDENUM SULFIDES; OPTOELECTRONIC DEVICES; PHOSPHORUS; PHOTODETECTORS; RESONATORS; SEMICONDUCTOR MATERIALS; SILICON NITRIDES; THICKNESS