Silicon-nitride photonic circuits interfaced with monolayer MoS{sub 2}

Journal Article · Mon Aug 31 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4929779· OSTI ID:22489188

Wei, Guohua ^[1]; Stanev, Teodor K. ^[2]; Czaplewski, David A.; Jung, Il Woong ^[3]

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1. Applied Physics Program, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208 (United States)
2. Department of Physics and Astronomy, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208 (United States)
3. Center for Nanoscale Materials, Argonne National Laboratory, 9700 S Cass Avenue, Argonne, Illinois 60439 (United States)

We report on the integration of monolayer molybdenum disulphide with silicon nitride microresonators assembled by visco-elastic layer transfer techniques. Evanescent coupling from the resonator mode to the monolayer is confirmed through measurements of cavity transmission. The absorption of the monolayer semiconductor flakes in this geometry is determined to be 850 dB/cm, which is larger than that of graphene and black phosphorus with the same thickness. This technique can be applied to diverse monolayer semiconductors for assembling hybrid optoelectronic devices such as photodetectors and modulators operating over a wide spectral range.

• OSTI ID: 22489188
• Journal Information: Applied Physics Letters, Vol. 107, Issue 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABSORPTION
GRAPHENE
INTERFACES
MOLYBDENUM
MOLYBDENUM SULFIDES
OPTOELECTRONIC DEVICES
PHOSPHORUS
PHOTODETECTORS
RESONATORS
SEMICONDUCTOR MATERIALS
SILICON NITRIDES
THICKNESS