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Title: Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

Proton-induced damage in AlGaN/GaN HEMTs was investigated using energy-dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM), and simulated using a Monte Carlo technique. The results were correlated to electrical degradation using Hall measurements. It was determined by EDS that the interface between GaN and AlGaN in the irradiated HEMT was broadened by 2.2 nm, as estimated by the width of the Al EDS signal compared to the as-grown interface. The simulation results show a similar Al broadening effect. The extent of interfacial roughening was examined using high resolution TEM. At a 2 MeV proton fluence of 6 × 10{sup 14} H{sup +}/cm{sup 2}, the electrical effects associated with the Al broadening and surface roughening include a degradation of the ON-resistance and a decrease in the electron mobility and 2DEG sheet carrier density by 28.9% and 12.1%, respectively.
Authors:
; ; ; ; ;  [1] ; ;  [2] ;  [3] ;  [4]
  1. U.S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC 20375 (United States)
  2. University of California at Berkeley, Berkeley, California 94720 (United States)
  3. ERC, Research Center Juelich GmbH, 52425 Juelich (Germany)
  4. Naval Postgraduate School, Monterey, California 93943 (United States)
Publication Date:
OSTI Identifier:
22489177
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIER DENSITY; COMPARATIVE EVALUATIONS; ELECTRON MOBILITY; GALLIUM NITRIDES; INTERFACES; IRRADIATION; MEV RANGE 01-10; MONTE CARLO METHOD; PROTONS; RESOLUTION; SIMULATION; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY SPECTROSCOPY