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Title: Investigation of defect-induced abnormal body current in fin field-effect-transistors

This letter investigates the mechanism of abnormal body current at the linear region in n-channel high-k/metal gate stack fin field effect transistors. Unlike body current, which is generated by impact ionization at high drain voltages, abnormal body current was found to increase with decreasing drain voltages. Notably, the unusual body leakage only occurs in three-dimensional structure devices. Based on measurements under different operation conditions, the abnormal body current can be attributed to fin surface defect-induced leakage current, and the mechanism is electron tunneling to the fin via the defects, resulting in holes left at the body terminal.
Authors:
; ; ;  [1] ;  [1] ;  [2] ;  [3] ;  [4] ; ;  [5]
  1. Department of Physics, National Sun Yat-sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan (China)
  2. (China)
  3. Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)
  4. Department of Photonics, National Sun Yat-sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan (China)
  5. Device Department, United Microelectronics Corporation, No.18, Nanke 2nd Rd., Tainan Science Park, Sinshih Dist., Tainan 74147, Taiwan (China)
Publication Date:
OSTI Identifier:
22489176
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; HOLES; IONIZATION; LEAKAGE CURRENT; METALS; OPERATION; SURFACES; THREE-DIMENSIONAL LATTICES; TUNNEL EFFECT