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Title: Conducting mechanisms of forming-free TiW/Cu{sub 2}O/Cu memristive devices

P-type Cu{sub 2}O is a promising CMOS-compatible candidate to fabricate memristive devices for next-generation memory, logic and neuromorphic computing. In this letter, the microscopic switching and conducting mechanisms in TiW/Cu{sub 2}O/Cu memristive devices have been thoroughly investigated. The bipolar resistive switching behaviors without an electro-forming process are ascribed to the formation and rupture of the conducting filaments composed of copper vacancies. In the low resistive state, the transport of electrons in the filaments follows Mott's variable range hopping theory. When the devices switch back to high resistive state, the coexistence of Schottky emission at the Cu/Cu{sub 2}O interface and electron hopping between the residual filaments is found to dominate the conducting process. Our results will contribute to the further understanding and optimization of p-type memristive materials.
Authors:
; ; ; ; ; ; ; ; ;  [1] ;  [2]
  1. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22489175
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COPPER; COPPER OXIDES; EMISSION; FILAMENTS; INTERFACES; RUPTURES; SWITCHES; VACANCIES