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Title: Atomic transport during solid-phase epitaxial recrystallization of amorphous germanium

The atomic mixing of matrix atoms during solid-phase epitaxy (SPE) is studied by means of isotopically enriched germanium (Ge) multilayer structures that were amorphized by Ge ion implantation up to a depth of 1.5 μm. Recrystallization of the amorphous structure is performed at temperatures between 350 °C and 450 °C. Secondary-ion-mass-spectrometry is used to determine the concentration-depth profiles of the Ge isotope before and after SPE. An upper limit of 0.5 nm is deduced for the displacement length of the Ge matrix atoms by the SPE process. This small displacement length is consistent with theoretical models and atomistic simulations of SPE, indicating that the SPE mechanism consists of bond-switching with nearest-neighbours across the amorphous-crystalline (a/c) interface.
Authors:
;  [1] ; ;  [2] ; ;  [3]
  1. Institute of Materials Physics, Westfälische Wilhelms-Universität Münster, 48149 Münster (Germany)
  2. School of Physics, University of Melbourne, Parkville 3010 (Australia)
  3. Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden (Germany)
Publication Date:
OSTI Identifier:
22489159
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATOM TRANSPORT; DEPTH; EPITAXY; GERMANIUM; GERMANIUM IONS; GERMANIUM ISOTOPES; LAYERS; LENGTH; MASS SPECTROSCOPY; RECRYSTALLIZATION; SOLIDS