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Title: Electron scattering times in ZnO based polar heterostructures

The remarkable historic advances experienced in condensed matter physics have been enabled through the continued exploration and proliferation of increasingly richer and cleaner material systems. In this work, we report on the scattering times of charge carriers confined in state-of-the-art MgZnO/ZnO heterostructures displaying electron mobilities in excess of 10{sup 6} cm{sup 2}/V s. Through an examination of low field quantum oscillations, we obtain the effective mass of charge carriers, along with the transport and quantum scattering times. These times compare favorably with high mobility AlGaAs/GaAs heterostructures, suggesting the quality of MgZnO/ZnO heterostructures now rivals that of traditional semiconductors.
Authors:
 [1] ;  [2] ;  [3] ;  [1] ;  [4] ;  [5] ;  [6] ;  [7] ;  [8] ;  [1] ;  [6]
  1. Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo 113-8656 (Japan)
  2. (Japan)
  3. (Germany)
  4. Max Planck Institute for Solid State Research, D-70569 Stuttgart (Germany)
  5. Department of Advanced Materials Science, The University of Tokyo, Kashiwa 277-8561 (Japan)
  6. (CEMS), Wako 351-0198 (Japan)
  7. Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)
  8. (JST), Tokyo 102-0075 (Japan)
Publication Date:
OSTI Identifier:
22489153
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM ARSENIDES; AUGMENTATION; CHARGE CARRIERS; EFFECTIVE MASS; ELECTRON MOBILITY; GALLIUM ARSENIDES; SCATTERING; SEMICONDUCTOR MATERIALS; ZINC OXIDES