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Title: In situ plasma enhanced atomic layer deposition half cycle study of Al{sub 2}O{sub 3} on AlGaN/GaN high electron mobility transistors

A half cycle study of plasma enhanced atomic layer deposited (PEALD) Al{sub 2}O{sub 3} on AlGaN is investigated using in situ X-ray photoelectron spectroscopy, low energy ion scattering, and ex situ electrical characterizations. A faster nucleation or growth is detected from PEALD relative to purely thermal ALD using an H{sub 2}O precursor. The remote O{sub 2} plasma oxidizes the AlGaN surface slightly at the initial stage, which passivates the surface and reduces the OFF-state leakage. This work demonstrates that PEALD is a useful strategy for Al{sub 2}O{sub 3} growth on AlGaN/GaN devices.
Authors:
;  [1]
  1. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)
Publication Date:
OSTI Identifier:
22489148
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM OXIDES; DEPOSITION; ELECTRON MOBILITY; GALLIUM NITRIDES; LAYERS; NUCLEATION; PLASMA; PRECURSOR; SCATTERING; SURFACES; TRANSISTORS; WATER; X-RAY PHOTOELECTRON SPECTROSCOPY