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Title: Localized surface phonon polariton resonances in polar gallium nitride

We demonstrate the excitation of localized surface phonon polaritons in an array of sub-diffraction pucks fabricated in an epitaxial layer of gallium nitride (GaN) on a silicon carbide (SiC) substrate. The array is characterized via polarization- and angle-dependent reflection spectroscopy in the mid-infrared, and coupling to several localized modes is observed in the GaN Reststrahlen band (13.4–18.0 μm). The same structure is simulated using finite element methods and the charge density of the modes are studied; transverse dipole modes are identified for the transverse electric and magnetic polarizations and a quadrupole mode is identified for the transverse magnetic polarization. The measured mid-infrared spectrum agrees well with numerically simulated spectra. This work could enable optoelectronic structures and devices that support surface modes at mid- and far-infrared wavelengths.
Authors:
; ; ;  [1] ; ;  [2] ;  [1] ;  [3]
  1. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
  2. Department of Electrical and Computer Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801 (United States)
  3. (United States)
Publication Date:
OSTI Identifier:
22489139
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COUPLING; DIFFRACTION; DIPOLES; EPITAXY; EXCITATION; FINITE ELEMENT METHOD; GALLIUM NITRIDES; INFRARED SPECTRA; PHONONS; POLARIZATION; POLARONS; REFLECTION; SILICON CARBIDES; SIMULATION; SPECTROSCOPY; SUBSTRATES; SURFACES