InAs/AlAsSb based quantum cascade detector
- Institute for Solid State Electronics and Center for Micro- and Nanostructures, TU Wien, Floragasse 7, 1040 Vienna (Austria)
- Austrian Academy of Sciences, Dr. Ignaz Seipel-Platz 2, 1010 Vienna (Austria)
In this letter, we introduce the InAs/AlAsSb material system for quantum cascade detectors (QCDs). InAs/AlAsSb can be grown lattice matched to InAs and exhibits a conduction band offset of approximately 2.1 eV, enabling the design of very short wavelength quantum cascade detectors. Another benefit using this material system is the low effective mass of the well material that improves the total absorption of the detector and decreases the intersubband scattering rates, which increases the device resistance and thus enhances the noise behavior. We have designed, grown, and measured a QCD that detects at a wavelength of λ = 4.84 μm and shows a peak specific detectivity of approximately 2.7 × 10{sup 7 }Jones at T = 300 K.
- OSTI ID:
- 22489138
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 8; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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