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Title: InAs/AlAsSb based quantum cascade detector

In this letter, we introduce the InAs/AlAsSb material system for quantum cascade detectors (QCDs). InAs/AlAsSb can be grown lattice matched to InAs and exhibits a conduction band offset of approximately 2.1 eV, enabling the design of very short wavelength quantum cascade detectors. Another benefit using this material system is the low effective mass of the well material that improves the total absorption of the detector and decreases the intersubband scattering rates, which increases the device resistance and thus enhances the noise behavior. We have designed, grown, and measured a QCD that detects at a wavelength of λ = 4.84 μm and shows a peak specific detectivity of approximately 2.7 × 10{sup 7 }Jones at T = 300 K.
Authors:
; ; ; ; ; ;  [1] ;  [2]
  1. Institute for Solid State Electronics and Center for Micro- and Nanostructures, TU Wien, Floragasse 7, 1040 Vienna (Austria)
  2. Austrian Academy of Sciences, Dr. Ignaz Seipel-Platz 2, 1010 Vienna (Austria)
Publication Date:
OSTI Identifier:
22489138
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 8; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; APPROXIMATIONS; DESIGN; EFFECTIVE MASS; EV RANGE 01-10; INDIUM ARSENIDES; NOISE; PEAKS; QUANTUM CHROMODYNAMICS; SCATTERING; WAVELENGTHS