Silicon superconducting quantum interference device
- Université Paris-sud, CNRS - IEF, F-91405 Orsay - France (France)
- Université Grenoble Alpes, CNRS - Inst. Néel, F-38000 Grenoble (France)
- Center for probing at nanoscale, Stanford University, Palo Alto, California 94305-4045 (United States)
We have studied a Superconducting Quantum Interference Device (SQUID) made from a single layer thin film of superconducting silicon. The superconducting layer is obtained by heavily doping a silicon wafer with boron atoms using the gas immersion laser doping technique. The SQUID is composed of two nano-bridges (Dayem bridges) in a loop and shows magnetic flux modulation at low temperature and low magnetic field. The overall behavior shows very good agreement with numerical simulations based on the Ginzburg-Landau equations.
- OSTI ID:
- 22489117
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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