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Title: Scattering induced by Al segregation in AlGaN/GaN heterostructures

The effect of Al segregation near dislocations on the mobility of two-dimensional electron gas in AlGaN/GaN heterostructure-based high-electron-mobility transistors was investigated. Exponentially varied composition fluctuation was effective in describing Al segregation near dislocations when calculating scattering behavior. Mobility, which was limited by Al segregation surrounding dislocation lines, was calculated to be in the order of 10{sup 3} cm{sup 2}/Vs to 10{sup 6} cm{sup 2}/Vs. Results indicated that the mobility in AlGaN/GaN heterojunction was enhanced upon the reduction of dislocation density at low temperature. This study contributes to generating higher electron mobility in AlGaN/GaN heterojunctions.
Authors:
;  [1] ;  [2]
  1. Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)
  2. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85281 (United States)
Publication Date:
OSTI Identifier:
22489111
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DISLOCATIONS; ELECTRON GAS; ELECTRON MOBILITY; GALLIUM NITRIDES; HETEROJUNCTIONS; SCATTERING; SEGREGATION; TRANSISTORS; TWO-DIMENSIONAL SYSTEMS