skip to main content

Title: Preserving the 7 × 7 surface reconstruction of clean Si(111) by graphene adsorption

We employ room-temperature ultrahigh vacuum scanning tunneling microscopy and ab-initio calculations to study graphene flakes that were adsorbed onto the Si(111)–7 × 7 surface. The characteristic 7 × 7 reconstruction of this semiconductor substrate can be resolved through graphene at all scanning biases, thus indicating that the atomistic configuration of the semiconducting substrate is not altered upon graphene adsorption. Large-scale ab-initio calculations confirm these experimental observations and point to a lack of chemical bonding among interfacial graphene and silicon atoms. Our work provides insight into atomic-scale chemistry between graphene and highly reactive surfaces, directing future passivation and chemical interaction work in graphene-based heterostructures.
Authors:
; ;  [1] ; ;  [2]
  1. Department of Electrical and Computer Engineering, Beckman Institute for Advanced Science and Technology, and Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
  2. Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 (United States)
Publication Date:
OSTI Identifier:
22489108
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ADSORPTION; ATOMS; CHEMICAL BONDS; GRAPHENE; PASSIVATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; SURFACES; TEMPERATURE RANGE 0273-0400 K