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Title: Ion implantation for manufacturing bent and periodically bent crystals

Ion implantation is proposed to produce self-standing bent monocrystals. A Si sample 0.2 mm thick was bent to a radius of curvature of 10.5 m. The sample curvature was characterized by interferometric measurements; the crystalline quality of the bulk was tested by X-ray diffraction in transmission geometry through synchrotron light at ESRF (Grenoble, France). Dislocations induced by ion implantation affect only a very superficial layer of the sample, namely, the damaged region is confined in a layer 1 μm thick. Finally, an elective application of a deformed crystal through ion implantation is here proposed, i.e., the realization of a crystalline undulator to produce X-ray beams.
Authors:
; ; ; ;  [1] ; ;  [2] ;  [3]
  1. Department of Physics and Earth Sciences, University of Ferrara, Via Saragat 1/c, 44122 Ferrara, Italy and INFN, Section of Ferrara (Italy)
  2. Department of Physics and Astronomy Galileo Galilei, University of Padova, Via Marzolo 8, 35131 Padova (Italy)
  3. Dipertimento di Economia e Tecnologia, Università degli Studi della Repubblica di San Marino, Salita alla Rocca, 44, 47890 San Marino Città (San Marino)
Publication Date:
OSTI Identifier:
22489102
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BEAMS; DISLOCATIONS; EUROPEAN SYNCHROTRON RADIATION FACILITY; GEOMETRY; ION IMPLANTATION; LAYERS; MANUFACTURING; MONOCRYSTALS; PERIODICITY; SYNCHROTRON RADIATION; TRANSMISSION; X RADIATION; X-RAY DIFFRACTION