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Title: Ion implantation for manufacturing bent and periodically bent crystals

Abstract

Ion implantation is proposed to produce self-standing bent monocrystals. A Si sample 0.2 mm thick was bent to a radius of curvature of 10.5 m. The sample curvature was characterized by interferometric measurements; the crystalline quality of the bulk was tested by X-ray diffraction in transmission geometry through synchrotron light at ESRF (Grenoble, France). Dislocations induced by ion implantation affect only a very superficial layer of the sample, namely, the damaged region is confined in a layer 1 μm thick. Finally, an elective application of a deformed crystal through ion implantation is here proposed, i.e., the realization of a crystalline undulator to produce X-ray beams.

Authors:
; ; ; ;  [1]; ;  [2];  [3]
  1. Department of Physics and Earth Sciences, University of Ferrara, Via Saragat 1/c, 44122 Ferrara, Italy and INFN, Section of Ferrara (Italy)
  2. Department of Physics and Astronomy Galileo Galilei, University of Padova, Via Marzolo 8, 35131 Padova (Italy)
  3. Dipertimento di Economia e Tecnologia, Università degli Studi della Repubblica di San Marino, Salita alla Rocca, 44, 47890 San Marino Città (San Marino)
Publication Date:
OSTI Identifier:
22489102
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BEAMS; DISLOCATIONS; EUROPEAN SYNCHROTRON RADIATION FACILITY; GEOMETRY; ION IMPLANTATION; LAYERS; MANUFACTURING; MONOCRYSTALS; PERIODICITY; SYNCHROTRON RADIATION; TRANSMISSION; X RADIATION; X-RAY DIFFRACTION

Citation Formats

Bellucci, Valerio, Camattari, Riccardo, Guidi, Vincenzo, Mazzolari, Andrea, Paternò, Gianfranco, Mattei, Giovanni, Scian, Carlo, and Lanzoni, Luca. Ion implantation for manufacturing bent and periodically bent crystals. United States: N. p., 2015. Web. doi:10.1063/1.4928553.
Bellucci, Valerio, Camattari, Riccardo, Guidi, Vincenzo, Mazzolari, Andrea, Paternò, Gianfranco, Mattei, Giovanni, Scian, Carlo, & Lanzoni, Luca. Ion implantation for manufacturing bent and periodically bent crystals. United States. https://doi.org/10.1063/1.4928553
Bellucci, Valerio, Camattari, Riccardo, Guidi, Vincenzo, Mazzolari, Andrea, Paternò, Gianfranco, Mattei, Giovanni, Scian, Carlo, and Lanzoni, Luca. 2015. "Ion implantation for manufacturing bent and periodically bent crystals". United States. https://doi.org/10.1063/1.4928553.
@article{osti_22489102,
title = {Ion implantation for manufacturing bent and periodically bent crystals},
author = {Bellucci, Valerio and Camattari, Riccardo and Guidi, Vincenzo and Mazzolari, Andrea and Paternò, Gianfranco and Mattei, Giovanni and Scian, Carlo and Lanzoni, Luca},
abstractNote = {Ion implantation is proposed to produce self-standing bent monocrystals. A Si sample 0.2 mm thick was bent to a radius of curvature of 10.5 m. The sample curvature was characterized by interferometric measurements; the crystalline quality of the bulk was tested by X-ray diffraction in transmission geometry through synchrotron light at ESRF (Grenoble, France). Dislocations induced by ion implantation affect only a very superficial layer of the sample, namely, the damaged region is confined in a layer 1 μm thick. Finally, an elective application of a deformed crystal through ion implantation is here proposed, i.e., the realization of a crystalline undulator to produce X-ray beams.},
doi = {10.1063/1.4928553},
url = {https://www.osti.gov/biblio/22489102}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 6,
volume = 107,
place = {United States},
year = {Mon Aug 10 00:00:00 EDT 2015},
month = {Mon Aug 10 00:00:00 EDT 2015}
}