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Title: A planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures

Schottky Barrier-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.
Authors:
 [1] ; ;  [2] ; ;  [1] ;  [3] ;  [2] ;  [4] ; ;  [1] ;  [4]
  1. School of Physics, UNSW, Sydney 2052 (Australia)
  2. School of Electrical Engineering and Telecommunications, UNSW, Sydney 2052 (Australia)
  3. (EQuS), School of Physics, UNSW, Sydney 2052 (Australia)
  4. (CQC2T), UNSW, Sydney 2052 (Australia)
Publication Date:
OSTI Identifier:
22489100
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRODES; FABRICATION; INTERFACES; METALS; MOSFET; SEMICONDUCTOR MATERIALS; SILICON OXIDES; SUPERCONDUCTING DEVICES