skip to main content

SciTech ConnectSciTech Connect

Title: High temperature coefficient of resistance for a ferroelectric tunnel junction

An infrared detector is proposed that is based on a ferroelectric tunnel junction (FTJ) working under bolometer-like principles. Electron tunneling, either direct or indirect, through the ferroelectric barrier depends on the temperature of the devices. During tunneling, infrared radiation alters the polarization of the ferroelectric film via pyroelectricity, resulting in a change in the barrier height of the tunnel junction. A high temperature coefficient of resistance of up to −3.86% was observed at room temperature. These results show that the FTJ structure has potential to be adapted for use in uncooled infrared detectors.
Authors:
; ; ; ;  [1] ;  [2] ; ; ; ; ; ; ; ;  [1]
  1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Yu Tian Road 500, Shanghai 200083 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22489093
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; FERROELECTRIC MATERIALS; FILMS; INFRARED RADIATION; SUPERCONDUCTING JUNCTIONS; TEMPERATURE RANGE 0273-0400 K; TUNNEL EFFECT TUNNEL JUNCTIONS