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Title: Coexistence of electric field controlled ferromagnetism and resistive switching for TiO{sub 2} film at room temperature

The Ag/TiO{sub 2}/Nb:SrTiO{sub 3}/Ag device exhibits the coexistence of electric field controlled ferromagnetism and resistive switching at room temperature. The bipolar resistive switching in Ag/TiO{sub 2}/Nb:SrTiO{sub 3}/Ag device may be dominated by the modulation of Schottky-like barrier with the electron injection-trapped/detrapped process at the interface of TiO{sub 2}/Nb:SrTiO{sub 3}. We suggest that the electric field-induced magnetization modulation originates mainly from the creation/annihilation of lots of oxygen vacancies in TiO{sub 2}.
Authors:
; ; ; ; ;  [1]
  1. School of Physics, State Key Laboratory for Crystal Materials, Shandong University, Jinan 250100 (China)
Publication Date:
OSTI Identifier:
22489090
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRIC FIELDS; FERROMAGNETISM; MAGNETIZATION; OXYGEN; STRONTIUM TITANATES; TEMPERATURE RANGE 0273-0400 K; TITANIUM OXIDES; TRAPPING; VACANCIES