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Title: Direct determination of the electron effective mass of GaAsN by terahertz cyclotron resonance spectroscopy

We use cyclotron resonance THz-spectroscopy in pulsed magnetic fields up to 63 T to measure the electron effective mass in Si-doped GaAsN semiconductor alloys with nitrogen content up to 0.2%. This technique directly probes the transport properties of the N-modified conduction band, particularly the electron effective mass, which has been discussed controversially in the experimental and theoretical literature. We report a slight increase of the electron effective mass and nonparabolicity with N-content for different photon energies in agreement with the two-level band anticrossing model calculations. Furthermore, we show a pronounced electron mobility drop with increasing N-content.
Authors:
;  [1] ;  [2] ; ; ;  [1] ;  [3] ;  [4]
  1. Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden (Germany)
  2. (Germany)
  3. School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)
  4. Helmholtz-Zentrum Dresden-Rossendorf, Dresden High Magnetic Field Laboratory, Bautzner Landstraße 400, 01328 Dresden (Germany)
Publication Date:
OSTI Identifier:
22489085
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALLOYS; CYCLOTRON RESONANCE; DOPED MATERIALS; EFFECTIVE MASS; ELECTRON MOBILITY; ELECTRONS; MAGNETIC FIELDS; NITROGEN; PHOTONS; SEMICONDUCTOR MATERIALS; SPECTROSCOPY