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Title: Accelerated light-induced degradation for detecting copper contamination in p-type silicon

Copper is a harmful metal impurity that significantly impacts the performance of silicon-based devices if present in active regions. In this contribution, we propose a fast method consisting of simultaneous illumination and annealing for the detection of copper contamination in p-type silicon. Our results show that, within minutes, such method is capable of producing a significant reduction of the minority carrier lifetime. A spatial distribution map of copper contamination can then be obtained through the lifetime values measured before and after degradation. In order to separate the effect of the light-activated copper defects from the other metastable complexes in low resistivity Cz-silicon, we carried out a dark anneal at 200 °C, which is known to fully recover the boron-oxygen defect. Similar to the boron-oxygen behavior, we show that the dark anneal also recovers the copper defects. However, the recovery is only partial and it can be used to identify the possible presence of copper contamination.
Authors:
;  [1] ;  [1] ;  [2]
  1. Department of Micro- and Nanosciences, Aalto University, Tietotie 3, 02150 Espoo (Finland)
  2. (Sweden)
Publication Date:
OSTI Identifier:
22489053
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; BORON; CARRIER LIFETIME; COPPER; IMPURITIES; MAPS; OXYGEN; PERFORMANCE; SILICON; SPATIAL DISTRIBUTION; VISIBLE RADIATION