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Title: Tuning thermal conductivity in homoepitaxial SrTiO{sub 3} films via defects

We demonstrate the ability to tune the thermal conductivity of homoepitaxial SrTiO{sub 3} films deposited by reactive molecular-beam epitaxy by varying growth temperature, oxidation environment, and cation stoichiometry. Both point defects and planar defects decrease the longitudinal thermal conductivity (k{sub 33}), with the greatest decrease in films of the same composition observed for films containing planar defects oriented perpendicular to the direction of heat flow. The longitudinal thermal conductivity can be modified by as much as 80%—from 11.5 W m{sup −1}K{sup −1} for stoichiometric homoepitaxial SrTiO{sub 3} to 2 W m{sup −1}K{sup −1} for strontium-rich homoepitaxial Sr{sub 1+δ}TiO{sub x} films—by incorporating (SrO){sub 2} Ruddlesden-Popper planar defects.
Authors:
 [1] ;  [2] ; ;  [3] ; ;  [4] ; ;  [5] ;  [5] ;  [2] ;  [1] ;  [2]
  1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501 (United States)
  2. (United States)
  3. Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)
  4. Peter Grünberg Institute (PGI9-IT), JARA-Fundamentals of Future Information Technology, Research Centre Jülich, D-52425 Jülich (Germany)
  5. School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853 (United States)
Publication Date:
OSTI Identifier:
22489052
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; FILMS; HEAT FLUX; MOLECULAR BEAM EPITAXY; POINT DEFECTS; STOICHIOMETRY; STRONTIUM; STRONTIUM OXIDES; STRONTIUM TITANATES; THERMAL CONDUCTIVITY; TUNING