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Title: Electrical injection to contactless near-surface InGaN quantum well

Charge injection to the prevailing and emerging light-emitting devices is almost exclusively based on the double heterojunction (DHJ) structures that have remained essentially unchanged for decades. In this letter, we report the excitation of a near surface indium gallium nitride (InGaN) quantum well (QW) by bipolar carrier diffusion from a nearby electrically excited pn-homojunction. The demonstrated near surface QW emitter is covered only by a 10 nm GaN capping leaving the light-emitting mesa perfectly free of metals, other contact, or current spreading structures. The presented proof-of-principle structure, operating approximately with a quantum efficiency of one fifth of a conventional single QW reference structure, provides conclusive evidence of the feasibility of using diffusion injection to excite near surface light-emitting structures needed, e.g., for developing light emitters or photo-voltaic devices based on nanoplasmonics or free-standing nanowires. In contrast to the existing DHJ solutions or optical pumping, our approach allows exciting nanostructures without the need of forming a DHJ, absorbing layers or even electrical contacts on the device surface.
Authors:
; ;  [1] ; ;  [2]
  1. Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FI-00076 Aalto (Finland)
  2. Department of Biomedical Engineering and Computational Science, Aalto University, P.O. Box 12200, FI-00076 Aalto (Finland)
Publication Date:
OSTI Identifier:
22489047
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; EXCITATION; GALLIUM NITRIDES; HETEROJUNCTIONS; LAYERS; NANOWIRES; OPTICAL PUMPING; QUANTUM EFFICIENCY; QUANTUM WELLS; SURFACES