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Title: Temperature influence on luminescent coupling efficiency in concentrator MJ SCs

Abstract

In the work, presented are the results of investigation of temperature dependencies of the luminescent coupling effectiveness in lattice-matched (LM) GaInP/GaAs/Ge and metamorphic (MM) GaInP/GaInAs/Ge solar cells. The “ordinary” luminescent coupling effectiveness rise has been observed with temperature decrease for GaAs-Ge, GaInP-GaInAs and GaInAs-Ge pairs of subcells, and its limiting values have been defined. A “reverse” behavior of the luminescent coupling effectiveness for the GaInP-GaAs pair has been found, determined emittance potential drop of wideband GaInP p-n junction. It is shown that the established “unusual” behavior of the LC efficiency may be determined by the presence of thermalized centers of non-radiative recombination of charge carriers for the GaInP subcell in GaInP/GaAs/Ge LM structure. Estimation of characteristic parameters for the nonradiative recombination processes in wideband GaInP p-n junction has been carried out, and values for the energy of the nonradiative center thermalization (E{sub nrad2} =79.42meV) and for the activation energy of nonradiative band-to-band recombination (E{sub A}=33.4meV) have been obtained.

Authors:
; ; ; ;  [1]
  1. Ioffe Institute, 26 Politekhnicheskaya str., St.-Petersburg, 194021 (Russian Federation)
Publication Date:
OSTI Identifier:
22489019
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1679; Journal Issue: 1; Conference: CPV-11: 11. international conference on conventrator photovoltaictaic systems, Aix-les-Bains (France), 13-15 Apr 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; ACTIVATION ENERGY; CHARGE CARRIERS; GALLIUM ARSENIDES; INDIUM PHOSPHIDES; LUMINESCENCE; P-N JUNCTIONS; QUANTUM EFFICIENCY; RECOMBINATION; SOLAR CELLS; SOLAR CONCENTRATORS; TEMPERATURE DEPENDENCE; THERMALIZATION

Citation Formats

Shvarts, Maxim, Emelyanov, Viktor, Mintairov, Mikhail, Evstropov, Valery, and Timoshina, Nailya. Temperature influence on luminescent coupling efficiency in concentrator MJ SCs. United States: N. p., 2015. Web. doi:10.1063/1.4931560.
Shvarts, Maxim, Emelyanov, Viktor, Mintairov, Mikhail, Evstropov, Valery, & Timoshina, Nailya. Temperature influence on luminescent coupling efficiency in concentrator MJ SCs. United States. https://doi.org/10.1063/1.4931560
Shvarts, Maxim, Emelyanov, Viktor, Mintairov, Mikhail, Evstropov, Valery, and Timoshina, Nailya. 2015. "Temperature influence on luminescent coupling efficiency in concentrator MJ SCs". United States. https://doi.org/10.1063/1.4931560.
@article{osti_22489019,
title = {Temperature influence on luminescent coupling efficiency in concentrator MJ SCs},
author = {Shvarts, Maxim and Emelyanov, Viktor and Mintairov, Mikhail and Evstropov, Valery and Timoshina, Nailya},
abstractNote = {In the work, presented are the results of investigation of temperature dependencies of the luminescent coupling effectiveness in lattice-matched (LM) GaInP/GaAs/Ge and metamorphic (MM) GaInP/GaInAs/Ge solar cells. The “ordinary” luminescent coupling effectiveness rise has been observed with temperature decrease for GaAs-Ge, GaInP-GaInAs and GaInAs-Ge pairs of subcells, and its limiting values have been defined. A “reverse” behavior of the luminescent coupling effectiveness for the GaInP-GaAs pair has been found, determined emittance potential drop of wideband GaInP p-n junction. It is shown that the established “unusual” behavior of the LC efficiency may be determined by the presence of thermalized centers of non-radiative recombination of charge carriers for the GaInP subcell in GaInP/GaAs/Ge LM structure. Estimation of characteristic parameters for the nonradiative recombination processes in wideband GaInP p-n junction has been carried out, and values for the energy of the nonradiative center thermalization (E{sub nrad2} =79.42meV) and for the activation energy of nonradiative band-to-band recombination (E{sub A}=33.4meV) have been obtained.},
doi = {10.1063/1.4931560},
url = {https://www.osti.gov/biblio/22489019}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1679,
place = {United States},
year = {Mon Sep 28 00:00:00 EDT 2015},
month = {Mon Sep 28 00:00:00 EDT 2015}
}