skip to main content

Title: Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000 W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37–39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be −7.5 mV/°C, 0.040 mA/cm{sup 2}/°C, and −0.09%/°C, respectively.
Authors:
; ; ; ; ; ;  [1]
  1. Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland)
Publication Date:
OSTI Identifier:
22489011
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1679; Journal Issue: 1; Conference: CPV-11: 11. international conference on conventrator photovoltaictaic systems, Aix-les-Bains (France), 13-15 Apr 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; CONCENTRATION RATIO; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRICAL FAULTS; GALLIUM ARSENIDES; LIGHT BULBS; MOLECULAR BEAM EPITAXY; PHOTOVOLTAIC CONVERSION; QUANTUM EFFICIENCY; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS; SOLAR SIMULATORS; TEMPERATURE COEFFICIENT; TEMPERATURE DEPENDENCE; XENON