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Title: Si-Ge-Sn alloys with 1.0 eV gap for CPV multijunction solar cells

Si-Ge-Sn ternary group IV alloys offer an alternative to currently used 1.0 eV gap materials utilized in multijunction solar cells. The advantage of Si-Ge-Sn is the ability to vary both the bandgap and lattice parameter independently. We present current development in fabrication of Si-Ge-Sn alloys with gaps in the 1.0 eV range. Produced material exhibits excellent structural properties, which allow for integration with existing III-V photovoltaic cell concepts. Time dependent room temperature photoluminescence data demonstrate that these materials have long carrier lifetimes. Absorption tunable by compositional changes is observed. As a prototype device set utilizing the 1 eV Si-Ge-Sn junction, single junction Si-Ge-Sn device and triple junction device with Si-Ge-Sn subcell have been fabricated. The resulting I-V and external quantum efficiency data show that the Si-Ge-Sn junction is fully functional and the performance is comparable to other 1.0 eV gap materials currently used.
Authors:
;  [1] ;  [2]
  1. Translucent Inc., Palo Alto, CA, 94303 (United States)
  2. Sumika Electronic Materials Inc., Phoenix, AZ, 85034 (United States)
Publication Date:
OSTI Identifier:
22489010
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1679; Journal Issue: 1; Conference: CPV-11: 11. international conference on conventrator photovoltaictaic systems, Aix-les-Bains (France), 13-15 Apr 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; CARRIER LIFETIME; COMPARATIVE EVALUATIONS; EV RANGE; FABRICATION; GERMANIUM ALLOYS; LATTICE PARAMETERS; PERFORMANCE; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTOR JUNCTIONS; SILICON ALLOYS; SOLAR CELLS; TEMPERATURE RANGE 0273-0400 K; TERNARY ALLOY SYSTEMS; TIME DEPENDENCE; TIN ALLOYS