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Title: Hydrogen concentration and electric field dependent on electronic properties of germanene

Electronic properties of the pristine/hydrogenated germanene are investigated by means of first principles calculations. Our calculation shows interesting results where the electronic properties of the hydrogenated germanene exhibit semiconductor with a direct band gap. It is interesting because pristine germanene (germanium analogue to graphene) has semi-metal properties with zero band gap. We also obtained that the band gap of hydrogenated germanene was influenced by the hydrogen (H) concentration, it is decreasing non-linearly as the H concentration decreased. As 100 percent concentration of H applied on top and bottom layer of germanene, the band gap is 1.41 eV. The pairing of the p{sub z}-orbital of Ge with the s-orbital of H gave contribution to the band gap of hydrogenated germanene. External electrical field is also can be applied to open the band gap. The band gap increasing linearly when the external electrical field increased on pristine germanene. The external electrical field no longer effect the band gap when it applied to the hydrogenated germanene.
Authors:
; ; ; ;  [1]
  1. Department of Physics, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung Jalan Ganesa 10 Bandung, 40132 Indonesia (Indonesia)
Publication Date:
OSTI Identifier:
22488941
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1677; Journal Issue: 1; Conference: 5. international conference on mathematics and natural sciences, Bandung (Indonesia), 2-3 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABUNDANCE; CONCENTRATION RATIO; ELECTRIC FIELDS; ENERGY GAP; EV RANGE; GERMANENE; GRAPHENE; HYDROGEN; HYDROGENATION; LAYERS; NONLINEAR PROBLEMS; SEMICONDUCTOR MATERIALS