Optical electric fields as wavelength function within active layer of graphene/Si heterojunction solar cell – An analysis
- Department of Physics, physics of electronic materials research division, PECVD Lab Institut Teknologi Bandung Jl. Ganesha no. 10 Bandung 40132 (Indonesia)
The optical electric field characteristics of graphene/Si heterojunction thin film solar cell as the function of wavelength photons incident have modeled and calculated. There is ITO/TiO{sub 2}/C-Si/TiO{sub 2} device configuration in which p-n junction represented by C-Si and viewed as active layer for excited electrons production. The dependent of such electric field on wavelength can be understood by solving scattering matrix obtained from the interface matrix and layer matrix operation, in this report we have calculated the electric field distribution for several active layer thickness (d{sub AL}) conditions and each of them examined in the cases of x position are equal to zero, half and full of d{sub AL} while for the entire taking into account we used 250 – 840 nm wavelength range. However, this calculation is restricted by idealization assumption such as the complex refraction index is doesn’t change significantly by the thickness in hundred nanometer range, linear optical response described by scalar refraction complex index and the interface are parallel and flat compared to the wavelength of the light.
- OSTI ID:
- 22488935
- Journal Information:
- AIP Conference Proceedings, Vol. 1677, Issue 1; Conference: 5. international conference on mathematics and natural sciences, Bandung (Indonesia), 2-3 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Heterojunction silicon/indium tin oxide photoelectrodes: development of stable systems in aqueous electrolytes and their applicability to solar energy conversion and storage
Heterojunction solar cells. Semiannual progress report, June 1--December 31, 1976
Related Subjects
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPARATIVE EVALUATIONS
ELECTRIC FIELDS
ELECTRONS
GRAPHENE
HETEROJUNCTIONS
INTERFACES
LAYERS
PHOTONS
P-N JUNCTIONS
REFRACTION
S MATRIX
SILICON
SOLAR CELLS
THIN FILMS
TITANIUM OXIDES
VISIBLE RADIATION