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Title: Effect of annealing on the properties of nanocrystalline CuInSSe thin films deposited by spray pyrolysis

The effect of annealing CuInSSe thin films, which were grown on glass substrates using the spray pyrolysis technique from spray solutions having S/Se ionic ratio 0.6, were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), and optical transmission measurements. The CuInSSe films were co-deposited from an aqueous solution containing CuCl{sub 2}, InCl{sub 3}, thiourea and SeO{sub 2}. EDC was used as a complexing agent and films were deposited at the constant temperature 300°C. Post annealing (at 350°C) was used to improve the structural, morphological and optical properties of CuInSSe thin films. From the results, it is found that the films are single phase, p-type in conductivity having the chalcopyrite structure. From the Scherrer formula the average size of the films was found to be in the range (15-28) nm. Optical studies show that the optical band gap value increases slightly from 1.35 eV to 1.37 eV with annealing for films grown from spray solutions having S/Se ionic ratio 0.6.
Authors:
;  [1]
  1. School of Studies in Physics, Jiwaji University, Gwalior (MP), India-474011 (India)
Publication Date:
OSTI Identifier:
22488860
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1675; Journal Issue: 1; Conference: AMRP-2015: 4. national conference on advanced materials and radiation physics, Longowal (India), 13-14 Mar 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; AQUEOUS SOLUTIONS; CHALCOPYRITE; CHELATING AGENTS; COPPER CHLORIDES; COPPER SULFIDES; CRYSTALS; EV RANGE; INDIUM CHLORIDES; INDIUM SELENIDES; NANOSTRUCTURES; OPTICAL PROPERTIES; PYROLYSIS; SCANNING ELECTRON MICROSCOPY; SELENIUM OXIDES; SUBSTRATES; THIN FILMS; THIOUREA; X-RAY DIFFRACTION