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Title: Influence of bias voltage on structural and optical properties of TiN{sub x} thin films

In the present work, Ti thin films were deposited on Si substrate using DC sputtering technique. Indigenous hot cathode arc discharge plasma system was used for nitriding over these samples, where the plasma parameters and work piece can be controlled independently. A mixture of H{sub 2} and N{sub 2} gases (in the ratio of 80:20) was supplied into the plasma chamber. The effect of bias voltage on the crystal structure, morphology and optical properties was investigated by employing various physical techniques such as X-ray Diffraction, Atomic Force Microscopy and UV-Vis spectrometry. It was found that bias voltage affects largely the crystal structure and band gap which in turn is responsible for the modifications in optical properties of the deposited films.
Authors:
 [1] ;  [1] ;  [2] ; ;  [3]
  1. Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi – 110016 (India)
  2. (India)
  3. Department of Physics, Indian Institute of Technology Delhi, New Delhi – 110016 (India)
Publication Date:
OSTI Identifier:
22488854
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1675; Journal Issue: 1; Conference: AMRP-2015: 4. national conference on advanced materials and radiation physics, Longowal (India), 13-14 Mar 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; ATOMIC FORCE MICROSCOPY; CATHODES; CRYSTAL STRUCTURE; ELECTRIC POTENTIAL; ENERGY GAP; GASES; HYDROGEN; MIXTURES; MORPHOLOGY; OPTICAL PROPERTIES; PLASMA; SILICON; SPUTTERING; SUBSTRATES; THIN FILMS; TITANIUM NITRIDES; X-RAY DIFFRACTION