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Title: Optical gain in type–II InGaAs/GaAsSb quantum well nano-heterostructure

In this paper, we have simulated optical gain in type-II InGaAs/GaAsSb quantum well based nano-scale heterostructure. In order to simulate the optical gain, the heterostructure has been modeled with the help of six band k.p method. The 6 × 6 diagonalized k.p Hamiltonian has been solved to evaluate the valence sub-bands (i.e. light and heavy hole energies); and then optical matrix elements and optical gain within TE (Transverse Electric) mode has been calculated. The results obtained suggest that peak optical gain in the heterostructure can be achieved at the lasing wavelength ~ 1.95 µm (SWIR region) and at corresponding energy ~ 0.635 eV.
Authors:
; ; ;  [1]
  1. Department of Physics, Banasthali University, Banasthali Vidyapith-304022, Rajasthan (India)
Publication Date:
OSTI Identifier:
22488846
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1675; Journal Issue: 1; Conference: AMRP-2015: 4. national conference on advanced materials and radiation physics, Longowal (India), 13-14 Mar 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; EV RANGE; GAIN; GALLIUM ARSENIDES; HAMILTONIANS; HETEROJUNCTIONS; HOLES; INDIUM ARSENIDES; QUANTUM WELLS; VALENCE; VISIBLE RADIATION