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Title: Crystal growth and mechanical hardness of In{sub 2}Se{sub 2.7}Sb{sub 0.3} single crystal

The III-VI compound semiconductors is important for the fabrication of ionizing radiation detectors, solid-state electrodes, and photosensitive heterostructures, solar cell and ionic batteries. In this paper, In{sub 2}Se{sub 2.7} Sb{sub 0.3} single crystals were grown by the Bridgman method with temperature gradient of 60 °C/cm and the growth velocity 0.5cm/hr. The as-grown crystals were examined under the optical microscope for surface study, a various growth features observed on top free surface of the single crystal which is predominant of layers growth mechanism. The lattice parameters of as-grown crystal was determined by the XRD analysis. A Vickers’ projection microscope were used for the study of microhardness on the as-cleaved, cold-worked and annealed samples of the crystals, the results were discussed, and reported in detail.
Authors:
; ; ;  [1] ;  [2] ;  [3]
  1. Department of Physics, School of Science, Gujarat University, Ahmedabad, Gujarat, India-380009 (India)
  2. panditdindayal Petroleum University, Gandhinagar. Gujarat (India)
  3. BITS Edu Campus, Varnama, Vadodara, Gujarat (India)
Publication Date:
OSTI Identifier:
22488839
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1675; Journal Issue: 1; Conference: AMRP-2015: 4. national conference on advanced materials and radiation physics, Longowal (India), 13-14 Mar 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ANTIMONIDES; BRIDGMAN METHOD; CRYSTAL GROWTH; HETEROJUNCTIONS; INDIUM SELENIDES; LATTICE PARAMETERS; LAYERS; MICROHARDNESS; MONOCRYSTALS; RADIATION DETECTORS; SEMICONDUCTOR MATERIALS; SOLAR CELLS; SOLIDS; SURFACES; TEMPERATURE GRADIENTS; VICKERS HARDNESS; X-RAY DIFFRACTION