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Title: Effect of dopent on the structural and optical properties of ZnS thin film as a buffer layer in solar cell application

In order to find the suitable alternative of toxic CdS buffer layer, deposition of pure ZnS and doped with Al by chemical bath deposition method have been reported. Further as grown pure and doped thin films have been annealed at 150°C. The structural and surface morphological properties have been characterized by X-Ray diffraction (XRD) and Atomic Force Microscope (AFM).The XRD analysis shows that annealed thin film has been polycrystalline in nature with sphalerite cubic crystal structure and AFM images indicate increment in grain size as well as growth of crystals after annealing. Optical measurement data give band gap of 3.5 eV which is ideal band gap for buffer layer for solar cell suggesting that the obtained ZnS buffer layer is suitable in a low-cost solar cell.
Authors:
;  [1] ;  [2] ;  [3]
  1. Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India)
  2. National Institute of Solar Energy, Gurgaon (India)
  3. Thin Film and Nanotechnology Lab, Department of Physics Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 43100 (India)
Publication Date:
OSTI Identifier:
22488831
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1675; Journal Issue: 1; Conference: AMRP-2015: 4. national conference on advanced materials and radiation physics, Longowal (India), 13-14 Mar 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM; ANNEALING; ATOMIC FORCE MICROSCOPY; CADMIUM SULFIDES; CRYSTAL STRUCTURE; DEPOSITION; DOPED MATERIALS; EV RANGE; GRAIN SIZE; LAYERS; OPTICAL PROPERTIES; POLYCRYSTALS; SOLAR CELLS; SULFIDE MINERALS; SURFACES; THIN FILMS; TOXICITY; X-RAY DIFFRACTION; ZINC SULFIDES