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Title: Study on the I–V characteristics of quantum well/dot embedded GaAs/AlGaAs structures - A transfer matrix method

The tunneling current has been calculated by a derived analytical expression for the transmission coefficient (TC) based on the theory of coherent resonant tunneling within the effective mass approximation by applying a constant field in quantum well/dot dopped RTD. For the bare Al{sub 0.35}Ga{sub 0.65}As double barrier structure, the peak to valley ratio is 0.165 from the I-V characteristics. Notably, the presence of In{sub 0.21}Ga{sub 0.79}As well in the emitter region significantly enhances the peak to valley ratio to 0.970. Interestingly, the presence of both the In{sub 0.21}Ga{sub 0.79}As well and InAs QD, increases the peak to valley ratio further to 0.978, because of the greater probability for the energy levels in these regions to be in resonance. On comparing experimental results, which show the similar trend for the current-voltage characteristics, imply that the quantum structure considered here is suitable for device applications.
Authors:
; ;  [1]
  1. Department of Physics, Bharathiar University, Coimbatore- 641 046, Tamil Nadu (India)
Publication Date:
OSTI Identifier:
22488799
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1675; Journal Issue: 1; Conference: AMRP-2015: 4. national conference on advanced materials and radiation physics, Longowal (India), 13-14 Mar 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM ARSENIDES; COMPARATIVE EVALUATIONS; EFFECTIVE MASS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ENERGY LEVELS; GALLIUM ARSENIDES; INDIUM ARSENIDES; PROBABILITY; QUANTUM WELLS; TRANSFER MATRIX METHOD; TUNNEL EFFECT