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Title: Simplified gas sensor model based on AlGaN/GaN heterostructure Schottky diode

Physics based modeling of AlGaN/GaN heterostructure Schottky diode gas sensor has been investigated for high sensitivity and linearity of the device. Here the surface and heterointerface properties are greatly exploited. The dependence of two dimensional electron gas (2DEG) upon the surface charges is mainly utilized. The simulation of Schottky diode has been done in Technology Computer Aided Design (TCAD) tool and I-V curves are generated, from the I-V curves 76% response has been recorded in presence of 500 ppm gas at a biasing voltage of 0.95 Volt.
Authors:
; ; ;  [1] ; ;  [2]
  1. Advanced Technology Development Centre, Indian Institute of Technology Kharagpur, Kharagpur-721302 (India)
  2. Department of Electronics and Electrical communication Engineering, Indian Institute of Technology Kharagpur, Kharagpur-721302 (India)
Publication Date:
OSTI Identifier:
22488786
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1675; Journal Issue: 1; Conference: AMRP-2015: 4. national conference on advanced materials and radiation physics, Longowal (India), 13-14 Mar 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM COMPOUNDS; COMPUTER-AIDED DESIGN; DIAGRAMS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRON GAS; GALLIUM NITRIDES; HETEROJUNCTIONS; INTERFACES; SCHOTTKY BARRIER DIODES; SENSITIVITY; SURFACES; TWO-DIMENSIONAL CALCULATIONS; TWO-DIMENSIONAL SYSTEMS