Simplified gas sensor model based on AlGaN/GaN heterostructure Schottky diode

Journal Article · Fri Aug 28 00:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4929172· OSTI ID:22488786

Das, Subhashis; Majumdar, S.; Kumar, R.; Bag, A. ^[1]; Chakraborty, A.; Biswas, D. ^[2]

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1. Advanced Technology Development Centre, Indian Institute of Technology Kharagpur, Kharagpur-721302 (India)
2. Department of Electronics and Electrical communication Engineering, Indian Institute of Technology Kharagpur, Kharagpur-721302 (India)

Physics based modeling of AlGaN/GaN heterostructure Schottky diode gas sensor has been investigated for high sensitivity and linearity of the device. Here the surface and heterointerface properties are greatly exploited. The dependence of two dimensional electron gas (2DEG) upon the surface charges is mainly utilized. The simulation of Schottky diode has been done in Technology Computer Aided Design (TCAD) tool and I-V curves are generated, from the I-V curves 76% response has been recorded in presence of 500 ppm gas at a biasing voltage of 0.95 Volt.

• OSTI ID: 22488786
• Journal Information: AIP Conference Proceedings, Vol. 1675, Issue 1; Conference: AMRP-2015: 4. national conference on advanced materials and radiation physics, Longowal (India), 13-14 Mar 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
COMPUTER-AIDED DESIGN
DIAGRAMS
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRON GAS
GALLIUM NITRIDES
HETEROJUNCTIONS
INTERFACES
SCHOTTKY BARRIER DIODES
SENSITIVITY
SURFACES
TWO-DIMENSIONAL CALCULATIONS
TWO-DIMENSIONAL SYSTEMS