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Title: Optical and electrical properties of undoped and boron doped zinc oxide synthesized by chemical route

We have synthesized and studied the boron doped ZnO nanostructure thin films. The crystallinity of undoped and boron (B) doped ZnO (BZO) has been studied from XRD results. Using the Debye-Scherrer Formula, the grain size has been evaluated, which was found to decrease with increased doping concentration. The optical and electrical properties of (1, 3, 5 wt%) B-doped ZnO (BZO) has been investigated with reference to the undoped counterpart. The UV-VIS spectroscopic analysis revealed that the transmittance for undoped ZnO is maximum and it decreases with doping up to 3% but increases for 5% BZO. The dark as well as photo current–voltage (I–V) characteristics have been investigated in details and the changes occurred in the I-V characteristics with doping concentration as well as under illumination are also quite significant.
Authors:
; ;  [1]
  1. Department of Physics, National Institute Technology Silchar, Silchar-788010, Assam (India)
Publication Date:
OSTI Identifier:
22488779
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1675; Journal Issue: 1; Conference: AMRP-2015: 4. national conference on advanced materials and radiation physics, Longowal (India), 13-14 Mar 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON; CONCENTRATION RATIO; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GRAIN SIZE; ILLUMINANCE; NANOSTRUCTURES; PHOTOCONDUCTIVITY; THIN FILMS; X-RAY DIFFRACTION; ZINC OXIDES