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Title: Stimulated Brillouin scattering of laser in semiconductor plasma embedded with nano-sized grains

A high power laser propagating through semiconductor plasma undergoes Stimulated Brillouin scattering (SBS) from the electrostrictively generated acoustic perturbations. We have considered that nano-sized grains (NSGs) ions are embedded in semiconductor plasma by means of ion implantation. The NSGs are bombarded by the surrounding plasma particles and collect electrons. By considering a negative charge on the NSGs, we present an analytically study on the effects of NSGs on threshold field for the onset of SBS and Brillouin gain of generated Brillouin scattered mode. It is found that as the charge on the NSGs builds up, the Brillouin gain is significantly raised and the threshold pump field for the onset of SBS process is lowered.
Authors:
 [1] ;  [2] ;  [3]
  1. SRJ Government Girls’ College, Neemuch (M P) (India)
  2. Government P G College, Mandsaur (M P) (India)
  3. School of Studies in Physics, Vikram University, Ujjain, (M P) (India)
Publication Date:
OSTI Identifier:
22488664
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1670; Journal Issue: 1; Conference: EIPT-2015: International conference on emerging interfaces of plasma science and technology, Ujjain (India), 9-10 Mar 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BRILLOUIN EFFECT; DISTURBANCES; ELECTRONS; GAIN; ION IMPLANTATION; LASER RADIATION; NANOSTRUCTURES; PARTICLES; PLASMA; SEMICONDUCTOR MATERIALS