Nonlinear optical parameters of nonparabolic semiconductor plasmas: Influence of energy dependent effective mass
An investigation is carried out in III-V compound semiconductor when a strong transverse magnetic field is applied. By considering the heating effect of carriers, an analytical investigation is made for n-InSb in which the nonlinearity arises due to dependence of effective mass on electronic temperature. At optical frequencies the temperature dependence part of momentum transfer collision frequency is assumed to be negligibly small. The linear and nonlinear parts of optical parameters are evaluated through the first and third order susceptibility of InSb sample. The analysis reveals that the nonlinear part of refractive index increases with intensity which leads to self-focusing of the beam. Thus by adjusting the doping concentration pump frequency and intensity, one may achieve desired nonlinearity in the crystal. Hence n - InSb sample establishes its potentials as candidate material for fabrication of cubic nonlinear devices.
- OSTI ID:
- 22488649
- Journal Information:
- AIP Conference Proceedings, Vol. 1670, Issue 1; Conference: EIPT-2015: International conference on emerging interfaces of plasma science and technology, Ujjain (India), 9-10 Mar 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
ABUNDANCE
CHARGE CARRIERS
CONCENTRATION RATIO
CRYSTALS
EFFECTIVE MASS
ENERGY DEPENDENCE
FABRICATION
HEATING
INDIUM ANTIMONIDES
MAGNETIC FIELDS
MOMENTUM TRANSFER
NONLINEAR PROBLEMS
PLASMA
POTENTIALS
REFRACTIVE INDEX
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
VANADIUM COMPOUNDS