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Title: Nonlinear optical parameters of nonparabolic semiconductor plasmas: Influence of energy dependent effective mass

An investigation is carried out in III-V compound semiconductor when a strong transverse magnetic field is applied. By considering the heating effect of carriers, an analytical investigation is made for n-InSb in which the nonlinearity arises due to dependence of effective mass on electronic temperature. At optical frequencies the temperature dependence part of momentum transfer collision frequency is assumed to be negligibly small. The linear and nonlinear parts of optical parameters are evaluated through the first and third order susceptibility of InSb sample. The analysis reveals that the nonlinear part of refractive index increases with intensity which leads to self-focusing of the beam. Thus by adjusting the doping concentration pump frequency and intensity, one may achieve desired nonlinearity in the crystal. Hence n - InSb sample establishes its potentials as candidate material for fabrication of cubic nonlinear devices.
Authors:
;  [1]
  1. School of studies in Physics, Vikram University, Ujjain (M.P.)-India (India)
Publication Date:
OSTI Identifier:
22488649
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1670; Journal Issue: 1; Conference: EIPT-2015: International conference on emerging interfaces of plasma science and technology, Ujjain (India), 9-10 Mar 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABUNDANCE; CHARGE CARRIERS; CONCENTRATION RATIO; CRYSTALS; EFFECTIVE MASS; ENERGY DEPENDENCE; FABRICATION; HEATING; INDIUM ANTIMONIDES; MAGNETIC FIELDS; MOMENTUM TRANSFER; NONLINEAR PROBLEMS; PLASMA; POTENTIALS; REFRACTIVE INDEX; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; VANADIUM COMPOUNDS