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Title: Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [112{sup -}0] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.
Authors:
;  [1] ; ;  [2]
  1. Department of Physics, Indian Institute of Technology, Bombay, Mumbai-400076 (India)
  2. Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain)
Publication Date:
OSTI Identifier:
22488593
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 5; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CATALYSTS; ELECTRONS; INDIUM NITRIDES; LIQUIDS; NANOWIRES; NUCLEATION; PHOTOCONDUCTIVITY; PHOTOEMISSION; QUARTZ; SOLIDS; SUBSTRATES; SURFACES; THICKNESS; X RADIATION