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Title: Ferromagnetism in proton irradiated 4H-SiC single crystal

Room-temperature ferromagnetism is observed in proton irradiated 4H-SiC single crystal. An initial increase in proton dose leads to pronounced ferromagnetism, accompanying with obvious increase in vacancy concentration. Further increase in irradiation dose lowers the saturation magnetization with the decrease in total vacancy defects due to the defects recombination. It is found that divacancies are the mainly defects in proton irradiated 4H-SiC and responsible for the observed ferromagnetism.
Authors:
; ; ;  [1] ;  [2] ; ; ;  [1]
  1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22488550
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 4; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; FERROMAGNETISM; IRRADIATION; MAGNETIZATION; MONOCRYSTALS; PROTONS; RADIATION DOSES; SATURATION; SILICON CARBIDES