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Title: Determination of band offsets at the Al:ZnO/Cu{sub 2}SnS{sub 3} interface using X-ray photoelectron spectroscopy

The Al:ZnO/Cu{sub 2}SnS{sub 3} semiconductor heterojunction was fabricated. The structural and optical properties of the semiconductor materials were studied. The band offset at the Al:ZnO/Cu{sub 2}SnS{sub 3} heterojunction was studied using X-ray photoelectron spectroscopy technique. From the measurement of the core level energies and valence band maximum of the constituent elements, the valence band offset was calculated to be −1.1 ± 0.24 eV and the conduction band offset was 0.9 ± 0.34 eV. The band alignment at the heterojunction was found to be of type-I. The study of Al:ZnO/Cu{sub 2}SnS{sub 3} heterojunction is useful for solar cell applications.
Authors:
;  [1]
  1. Materials Research Centre, Indian Institute of Science, Bangalore, Karnataka 560012 (India)
Publication Date:
OSTI Identifier:
22488545
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 4; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; OPTICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SOLAR CELLS; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES