Weak-antilocalization and surface dominated transport in topological insulator Bi{sub 2}Se{sub 2}Te
- Indian Institute of Science Education Research Kolkata Mohanpur- 741246 (India)
- Indian Institute of Technology Roorkee, Roorkee-247667 (India)
We explore the phase coherence of thin films of the topological insulator material Bi{sub 2}Se{sub 2}Te grown through pulsed laser deposition (PLD) technique. The films were characterised using various techniques for phase and composition. The films were found to be of good quality. We carried out extensive magneto-transport studies of these films and found that they exhibit two dimensional weak antilocalization behaviour. A careful analysis revealed a relatively high phase coherence length (58nm at 1.78K) for a PLD grown film. Since PLD is an inexpensive technique, with the possibility to integrate with other materials, one can make devices which can be extremely useful for low power spintronics and topological quantum computation.
- OSTI ID:
- 22488530
- Journal Information:
- AIP Advances, Vol. 5, Issue 4; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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