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Title: The ZnO p-n homojunctions modulated by ZnMgO barriers

In this paper, we fabricated the ultrathin ZnO p-n homojunctions, which modulated by ZnMgO asymmetrical double barriers (ADB). The ADB p-n homojunctions displays step-like curve in the absorption spectrums, this is the first time that quantum confinement effect has been observed in the absorption spectrums at room temperature (RT). The Hall-effect data confirm there is 2-dimensional electron gas in the interface of the ZnMgO ADB p-n junctions. The quantum confinement effect enhances the hall-mobility μ to 10{sup 3} cm{sup 2}V {sup −1}s{sup −1} based on the polarity of the films. There was no rectification property in the ZnO homojunctions with thickness of 250nm, however, when the ADB was added in the n-type layer of the homojunctions, it displays a typical Zener diode rectification property in the I-V curve.
Authors:
 [1] ;  [2] ; ;  [1] ;  [3]
  1. Physics school, Anhui University, Jiulong street 111, Hefei 230601 (China)
  2. (China)
  3. Science school, Changzhou institute of technology, Wushan street 1, Changzhou 213002 (China)
Publication Date:
OSTI Identifier:
22488526
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 4; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTRA; DIAGRAMS; ELECTRON GAS; FILMS; HALL EFFECT; HOMOJUNCTIONS; INTERFACES; P-N JUNCTIONS; TEMPERATURE RANGE 0273-0400 K; ZINC OXIDES